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US 6,674,161 B1Granted
Semiconductor stacked die devices
AssigneeRambus Inc.
InventorBelgacem Haba
Life of this patent
Estimating the term…
Abstract
Semiconductor devices and methods of forming semiconductor devices are described. In one embodiment, at least one conductive structure is formed within a plurality of semiconductor substrates. At least portions of one of the conductive structures have oppositely facing, exposed outer surfaces. Individual substrates are stacked together in a die stack such that individual conductive structures on each substrate are in electrical contact with the conductive structures on a next adjacent substrate. In a preferred embodiment, the conductive structures comprise multi-layered, conductive pad structures.
Claims40
A semiconductor device comprising:
- a first singulated semiconductor die comprising IC devices, and having at least one conductive structure disposed within and through the die and in operative contact with the IC devices, the one conductive structure having a front side and a back side, the first singulated semiconductor die comprising a thinned semiconductor wafer portion;
- a via disposed in the semiconductor wafer portion and defining an opening, the via being joined with at least a portion of the back side of the one conductive structure, said thinned semiconductor wafer portion defining a generally planar surface that joins with said opening and is generally planar outside of an area occupied by said via;
- a second singulated semiconductor die comprising IC devices, and mounted together with the first die in a stacked arrangement, the second semiconductor die having at least one conductive structure disposed therewithin and in electrical contact with both the IC devices of the second semiconductor die and the conductive structure of the first semiconductor die, said electrical contact being established by conductive material that is received within said via.
A semiconductor device comprising:
- multiple singulated semiconductor die each of which comprising IC devices and one or more interface region joined with the IC devices, individual semiconductor die comprising thinned semiconductor wafer portions;
- at least one conductive structure disposed generally in the center of each die and joining with an associated one or more interface region, said at least one conductive structure being disposed laterally adjacent said associated one or more interface region;
- at least one via disposed in at least one of the semiconductor wafer portions of at least one of the die, said one via joining with at least a portion of an associated conductive structure;
- the multiple die being joined together in a die stack such that electrical contact between adjacent die is made through the conductive structures associated with each of the die, said electrical contact being established, at least in part, by conductive material received within said one via.
1 more element
A semiconductor device comprising:
- a first singulated semiconductor die comprising IC devices, and having at least one conductive structure disposed within and rough the die and in operative contact with the IC devices, the conductive structure comprising a multi-layered pad structure, the one conductive structure having a front side and a back side, the first singulated semiconductor die comprising a thinned semiconductor wafer portion;
- a via disposed in the semiconductor wafer portion and defining an opening, said via being joined with at least a portion of the back side of the one conductive structure;
- a second singulated semiconductor die comprising IC devices, and mounted together with the first die in a stacked arrangement, the second semiconductor die having at least one conductive structure disposed therewithin and comprising a multi-layered pad structure;
- first conductive material plated over portions of each conductive structure;
- second conductive material formed over the first conductive material of each structure and bonded together to form an electrical connection between the first and second semiconductor die;
- at least some of the conductive material being received within said via.
3 more elements
A semiconductor device comprising:
- a first singulated semiconductor die comprising IC devices, and having at least one conductive structure disposed within and through the die and in operative contact with the IC devices, the one conductive structure having a front side and a back side, the first singulated semiconductor die comprising a semiconductor wafer portion;
- a via disposed in the semiconductor wafer portion and which does not extend entirely through the wafer portion, the via defining an opening that tapers toward and joins with at least a portion of the back side of the one conductive structure;
- and
- a second singulated semiconductor die comprising IC devices, and mounted together with the first die in a stacked arrangement, the second semiconductor die having at least one conductive structure disposed therewithin and in electrical contact with both the IC devices of the second semiconductor die and the conductive structure of the first semiconductor die, said electrical contact being established by conductive material received within said via.
1 more element
A semiconductor device comprising:
- a first singulated semiconductor die comprising IC devices, and having at least one conductive structure disposed within and through the die and in operative contact with the IC devices, the one conductive structure having a front side and a back side, the first singulated semiconductor die comprising a semiconductor wafer portion;
- a first opening in the wafer portion adjacent and exposing the front side of the one conductive structure, the first opening having a width;
- a second opening in the wafer portion adjacent and exposing the back side of the one conductive structure, the second opening having a width that is less than the width of the first opening;
- a second singulated semiconductor die comprising IC devices, and mounted together with the first die in a stacked arrangement, the second semiconductor die having at least one conductive structure disposed therewithin and in electrical contact with both the IC devices of the second semiconductor die and the conductive structure of the first semiconductor die, said electrical contact being established by conductive material that is received over one of the front side and back side of the conductive structure of the first semiconductor die.
1 more element
Dependencies are inferred from the claim text.