Deuterium passivated semiconductor device having enhanced immunity to hot carrier effects
AssigneeAgere Systems Inc.
InventorsSundar S. Chetlur, Pradip K. Roy, Anthony S. Oates, Sidhartha Sen, Jonathan Z-N. Zhou
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Abstract
A semiconductor device having trap sites passivated with deuterium has enhanced immunity to hot carrier effects. The trap sites which are passivated with deuterium are encapsulated beneath a barrier film and are therefore resistant to having the deuterium diffuse away from the trap sites during subsequent high temperature processing operations.
Claims14
A semiconductor device comprising an oxide film formed on a surface of a semiconductor substrate and forming an interface therewith, a population of deuterium complexing with trap sites existing at the interface and within the oxide film, and a barrier film layer disposed over the oxide film, the barrier film layer including a composite structure of a TiN film formed over a further film, being impervious to deuterium and forming a continuous cover over the oxide film.
A semiconductor device comprising a silicon substrate having a surface, a channel region formed within the silicon substrate, an oxide film conterminous with the channel region and forming an interface region therewith, a polysilicon film formed over the oxide film, a dielectric film formed over the polysilicon film, a barrier film layer formed over the dielectric film and forming a continuous cover over the oxide film, the polysilicon film, and the dielectric film, the barrier film layer including a composite structure of a TiN film formed over a further film and being impervious to deuterium, and a population of deuterium complexing with a plurality of trap sites existing within the oxide film and the interface region.
Dependencies are inferred from the claim text.