Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same

A three axis MEM tunneling sensor assembly comprising:

• (a) orthogonally arranged beam structures, an associated resonator structure and associated mating structures arranged on a first substrate or wafer;
• (b) contact structures and associated mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer;
• and
• (c) an eutectic bonding layer disposed on said mating structures on at least one of the substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate or wafer in response to the application of pressure and heat therebetween, the mating structures being joined one to another at said eutectic bonding layer.

A three axis MEM tunneling/capacitive sensor, the sensor comprising:

• (a) a X-axis tunneling gyro disposed on a first substrate or wafer;
• (b) a Y-axis tunneling gyro disposed on the first substrate or wafer;
• (c) a Z-axis capacitive gyro disposed on the first substrate or wafer;
• (d) a second substrate or wafer;
• and
• (e) mating structures on at least one of said first and second substrates or wafers for mating the first substrate or wafer to the second substrate or wafer.

A three axis MEM tunneling/capacitive sensor assembly comprising:

• (a) a first substrate or wafer formed of silicon;
• (b) two orthogonally arranged tunneling sensors, each tunneling sensor including at least a cantilevered beam structure formed of silicon on said first substrate or wafer;
• (c) an orthogonally arranged capacitive gyro having a resonator structure, the capacitive gyro being sensitive on an axis which is orthogonally disposed to the beam structures of the two tunneling sensors, the resonator structure being formed of silicon on said first substrate or wafer;
• (d) a mating structure arranged on the first substrate or wafer;
• (e) at least one contact structure and an associated mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer;
• (f) an eutectic bonding layer disposed on said mating structure of at least one of the substrates or wafers for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate in response to the application of pressure and heat therebetween, the mating structures of the first and second substrates or wafers being joined one to another at said eutectic bonding layer;
• and
• (g) the first substrate or wafer being dissolvable by a solvent while the beam structures and resonator structure formed on the first substrate or wafer are resistant to being dissolved by said solvent.