Semiconductor power device for high-temperature applications

A semiconductor device, comprising:

• a compound semiconductor layer made of a compound semiconductor selected from the group consisting of a SiC layer, a GaN layer, an InP layer, an InGaAs layer, and an InGaPN layer;
• an inductor provided on the compound semiconductor layer;
• an inverter circuit including a MISFET provided on the compound semiconductor layer;
• a rectifying circuit including a Shottky diode provided on the compound semiconductor device;
• and
• a capacitor provided on the compound semiconductor layer,
• wherein the MISFET is composed of an active region formed on the compound semiconductor layer, a gate insulating film formed on the active region, a gate electrode formed on the gate insulating film and source and drain regions formed in a region located on both sides of the gate electrode, and
• the active region in a portion sandwiched between the source region and the drain region is composed of a plurality of first semiconductor layers and a plurality of second semiconductor layers containing an impurity for carriers at a high concentration and smaller in film thickness than the first semiconductor layer, the first and second semiconductor layers being alternately stacked,
• the device functioning as a lighting circuit for a fluorescent lamp device.