Semiconductor integrated circuit
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorNaoki Kotani
Life of this patent
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Abstract
A semiconductor integrated circuit includes: a logic circuit section including transistors formed on an SOI substrate; and a partially-depletion-type transistor, which is formed on the SOI substrate as a switching transistor for controlling ON/OFF states of the logic circuit section and which has a body contact portion. The partially-depletion-type transistor has a threshold voltage, which is substantially equal to that of the transistors in the logic circuit section when no potential is applied to the body contact portion and which is higher than that of the transistors in the logic circuit section when a potential is applied to the body contact portion.
Claims9
A semiconductor integrated circuit comprising:
- a logic circuit section including transistors for logical operations formed on an SOI substrate;
- a switching transistor, which is formed on the SOI substrate for controlling ON/OFF states of the logic circuit section and which has a body contact portion;
- a first power line that supply potential to the switching transistor;
- a second power line that supplies potential to the logic circuit section via the switching transistor;
- and
- a third power line that supplies a ground potential to the logic circuit section,
- wherein a threshold-voltage-setting doped layer of the transistors, for logical operation and a threshold-voltage-setting doped layer of the switching transistor have a same diffusion depth, and
- wherein the body contact portion of the switching transistor is connected to a ground portion, wherein a potential of wells in channels of the transistors for logical operations is electrically floating.
A semiconductor integrated circuit comprising:
- a logic circuit section including transistors for logical operations fanned on an SOI substrate;
- a switching transistor, which is formed on the SOI substrate for controlling ON/OFF states of the logic circuit section and which has a body contact portion;
- a first power line that supplies a supply potential to the switching transistor;
- a second power line that supplies the supply potential to the logic circuit section via the switching transistor;
- and
- a third power line that supplies a ground potential to the logic circuit section,
- wherein a threshold-voltage-setting doped layer of the transistors for logical operation and a threshold-voltage-setting doped layer of the switching transistor have a same diffusion depth, and
- wherein the body contact portion of the switching transistor is connected to power supply means via a switch, wherein a potential of wells in channels of the transistors for logical operations is electrically floating.
Dependencies are inferred from the claim text.