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US 6,674,121 B2Granted
Method and system for molecular charge storage field effect transistor
AssigneeThe Regents of the University of California
InventorsVeena Misra, David F. Bocian, Werner G. Kuhr, Jonathan S. Lindsey
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Abstract
A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
Claims27
A charge storage transistor comprising:
- a substrate comprising a channel region;
- a source and a drain in electrical contact with said channel region, such that current can flow between said source and said drain through said channel region and affected by the conductance of said channel region;
- one or more charge storage molecules covalently bonded proximate to said channel region such that charge transfer can occur between said charge storage molecules and said channel region, wherein charge stored on said molecules affects the conductance of said channel region;
- and
- a gate proximate to said one or more charge storage molecules such that a voltage between said gate and said source or said drain will cause charge stored on said charge storage molecules to flow to said channel region.
2 more elements
Dependencies are inferred from the claim text.