Semiconductor device and manufacturing method thereof
AssigneeSanyo Electric Co., Ltd.
InventorsToshimitsu Taniguchi, Shinya Mori, Shinzo Ishibe, Akira Suzuki
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Abstract
In a semiconductor device having P type and N type wells formed bordering on a step on a P type semiconductor substrate, a first transistor (precise transistor) having a first linewidth is formed on the P type well in a step lower region while a second transistor (high-voltage transistor) having a second linewidth greater than a linewidth of the first transistor is formed on the N type well in a step higher region.
Claims5
A semiconductor device comprising:
- a first transistor having a first gate linewidth formed in a first step region and;
- a second transistor having a second gate linewidth in a second step region on a semiconductor substrate having a step on a surface thereof,
- wherein the second step region is higher than the first step region, and
- wherein the second gate linewidth is greater than the first gate linewidth.
A semiconductor device formed on a semiconductor substrate having a step on a surface thereof comprising:
- a first transistor having a first linewidth formed in one of a semiconductor region of one conductivity type and a semiconductor region of opposite conductivity type formed in a step lower region;
- and
- a second transistor having a second linewidth greater than a linewidth of the first transistor formed in one of a semiconductor region of the one conductivity type and a semiconductor region of the opposite conductivity type formed in a step higher region.
A semiconductor device comprising:
- a semiconductor region of one conductivity type and a semiconductor region of opposite conductivity type formed on a semiconductor substrate of the one conductivity type having a step forming a boundary between the semiconductor region of one conductivity type and the semiconductor region of opposite conductivity type;
- a first gate electrode formed on one of the semiconductor region of one conductivity type and the semiconductor region of opposite conductivity type formed in a step lower region through a first gate oxide film;
- a first transistor formed in the vicinity of the first gate electrode with a first source/drain region opposite in conductivity type to the semiconductor region formed in the step lower region;
- a second gate electrode formed on one of the semiconductor region of one conductive type and the semiconductor region of opposite conductive type formed in a step higher region through a second gate oxide film, and the second gate electrode having a linewidth greater than the first gate electrode;
- and
- a second transistor formed in the vicinity of the second gate electrode with a second source/drain region opposite in conductivity type to the semiconductor region.
Dependencies are inferred from the claim text.