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US 6,674,107 B1Granted
Enhancement mode junction field effect transistor with low on resistance
AssigneeLovoltech, Inc.
InventorHo-Yuan Yu
Life of this patent
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Abstract
A normally “off” enhancement mode junction field effect transistor (JFET) is disclose. The JFET has a low threshold voltage in the range of 0.2 to 0.3 volts and a low on resistance. The Drain-to-Source voltage drop is less than 0.1 volt at a drain current of 100 amperes.
Claims8
An N-channel normally off power junction field effect transistor (JFET) comprising:
- a heavily doped N+ substrate;
- an epitaxial N layer formed on the top of said N+ substrate;
- a drain;
- a source disposed at the bottom of said N+ substrate;
- a heavily implanted N+ region disposed on said epitaxial N layer to form an ohmic contact for said drain;
- and
- a plurality of P-type gate regions implanted into said epitaxial N layer, each gate region separated by a distance, W, wherein a gate having a gate junction is formed at the interface between each of said P-type gale regions and said epitaxial N layer, and wherein the gate junctions, when zero biased, create depletion regions that prevent current flow between said drain and said source and wherein further said gate junctions, when forward biased, reduce said depletion regions to provide a low resistance conduction channel between said drain and said source, said JFET having an on threshold voltage for the voltage between said gate and said source within the range of 0.2 volt and 0.3 volt.
4 more elements
A P-channel normally off power junction field effect transistor (JFET) comprising:
- a heavily doped P+ substrate;
- an epitaxial P layer formed on the top of said P+ substrate;
- a drain;
- a source disposed at the bottom of said P+ substrate;
- a heavily implanted P+ region disposed on said epitaxial P layer to form an ohmic contact for said drain;
- and
- a plurality of N-type gate regions implanted into said epitaxial P layer, each gate region separated by a distance, W, wherein a gate having gate junction is formed at the interface between each of said N-type gate regions and said epitaxial P layer, and wherein the gate junctions, when zero biased, create depletion regions that prevent current flow between said drain and said source and wherein further said gate junctions, when forward biased, reduce said depletion regions to provide a low resistance conduction channel between said drain and said source, said JFET having an on threshold voltage for the voltage between said gate and said source within the range of −0.2 volt and −0.3 volt. 100 amperes.
4 more elements
Dependencies are inferred from the claim text.