Compound semiconductor surface stabilizing method, semiconductor laser device fabricating method using the stabilizing method, and semiconductor device
AssigneeSharp Kabushiki Kaisha
InventorMasanori Watanabe
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Abstract
In a compound semiconductor surface stabilizing method, a compound semiconductor is immersed in a solution containing sulfur ions, and then, the compound semiconductor is immersed in a solution containing cations, which react with sulfur to form a sulfide. These immersing steps form a sulfur layer and a sulfide layer in this order on a surface of the compound semiconductor.
Claims21
A compound semiconductor surface stabilizing method comprising steps of:
- immersing a region that includes a surface of a compound semiconductor in a solution containing sulfur ions;
- and
- immersing for 30 seconds or less the region that includes the surface of the compound semiconductor in a solution containing cations which react with sulfur to form a sulfide,
- whereby an amorphous or polycrystalline sulfur layer is formed on said surface of the compound semiconductor and an amorphous or polycrystalline sulfide layer is formed on the sulfur layer.
A compound semiconductor surface stabilizing method, comprising steps of:
- immersing a region that includes a surface of a compound semiconductor in a solution containing sulfur ions;
- and
- immersing the region that includes the surface of the compound semiconductor in a solution containing cations which react with sulfur to form a sulfide,
- wherein between said step of immersing a region that includes a surface of a compound semiconductor in a solution containing sulfur ions and said step of immersing the region that includes the surface of the compound semiconductor in a solution containing cations which react with sulfur to form a sulfide, the method further comprises a step of rinsing the surface of the compound semiconductor,
- whereby an amorphous or polycrystalline sulfur layer is formed on said surface of the compound semiconductor and an amorphous or polycrystalline sulfide layer is formed on the sulfur layer.
A compound semiconductor surface stabilizing method comprising the steps of:
- immersing a region that includes a surface of a compound semiconductor in a solution containing sulfur ions;
- and
- immersing the region that includes the surface of the compound semiconductor in a solution containing cations which react with sulfur to form a sulfide,
- wherein between said step of immersing a region that includes a surface of a compound semiconductor in a solution containing sulfur ions and said step of immersing the region that includes the surface of the compound semiconductor in a solution containing cations which react with sulfur to form a sulfide, the method further comprises a step of rinsing the surface of the compound semiconductor.
A semiconductor device comprising a compound semiconductor, and an amorphous sulfur layer and an amorphous sulfide layer formed in this order on a surface of the compound semiconductor.
Dependencies are inferred from the claim text.