CMOS image sensor
AssigneeKabushiki Kaisha Toshiba
InventorHirokazu Sekine
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AssigneeKabushiki Kaisha Toshiba
InventorHirokazu Sekine
Estimating the term…
A CMOS image sensor is provided with a first pixel group 12 and a second pixel group 13. The first pixel group 12 composed of a plurality of pixels arranged in a matrix at specified pitches PH and PV in the horizontal and vertical directions, respectively. The second pixel group 13 composed of a plurality of pixels arranged similarly in a matrix shifted by about one-half of the pitches PH and PV in the horizontal and vertical directions, respectively from the matrix of the first pixel group. Each of these pixels is composed of a combination of a photodiode PD, a reset transistor RS, a driver transistor D and an address transistor AD. The reset transistors RS belonging to the first and second pixel groups 12, 13 and arranged in a corresponding row of the matrix are connected to a common reset line RSL. Similarly, the address transistors AD belonging to the first and second pixel groups 12, 13 and arranged in a corresponding row of the matrix are connected to a common address line ADL. Further, drain electrodes of two reset transistors RS contained in adjacent four pixels and drain electrodes of two address transistors are connected to a common reset drain voltage line terminal RD.
A CMOS image sensor comprising:
A CMOS image sensor formed in an integrated circuit comprising:
Dependencies are inferred from the claim text.