Electron beam lithography system, electron beam lithography apparatus, and method of lithography

An electron beam lithography apparatus comprising:

• a plurality of lithography data generation parts, respectively forming a plurality of exposure maps having different exposure conditions and generating lithography data to form an exposure pattern for a sample, said lithography data generation parts each having:
• an exposure map implementation part to form an exposure map for an electron beam from said lithography data,
• an electron beam correction part for correcting an irradiation quantity of said electron beam to be irradiated to said sample referring to said exposure map, and
• an electron beam lithography part for performing exposure by irradiating said electron beam onto the sample based on a value corrected by said electron beam correction part, wherein
• said lithography data generation parts simultaneously and respectively form said exposure maps respectively having different exposure conditions based on an order that orders a plurality of different operations based on one of the plurality of lithography data to plural lithography data generating parts, and
• said electron beam lithography part irradiate said electron beam based on one of said exposure maps corrected by said electron beam correction parts.