Infrared detecting element, infrared two-dimensional image sensor, and method of manufacturing the same
AssigneesMatsushita Electric Industrial Co., Ltd., Hochiki Corporation, Murata Manufacturing Co., Ltd., Masanori Okuyama
InventorsKazuhiko Hashimoto, Tomonori Mukaigawa, Ryuichi Kubo, Hiroyuki Kishihara, Minoru Noda, Masanori Okuyama
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Abstract
An infrared detecting capacitor formed of a ferroelectric film has its capacitor portion supported by first and second interconnecting lines to be held on an Si substrate located on both sides of a trench. A lower electrode is coupled with the first interconnecting line while an upper electrode is coupled with the second interconnecting line. The capacitor portion is a rectangle in shape in plan view without small triangular sections opposite to each other in the diagonal direction.
Claims22
An infrared detecting element formed on a main surface of a substrate comprising an infrared detecting capacitor having a capacitance value changing according to temperature change caused by absorption of infrared radiation,
- said infrared detecting capacitor including
- a trench formed in said substrate,
- first and second interconnecting lines extending from both sides of said trench, and
- a capacitor portion shaped to have three pairs of opposing sides in plan view, one pair of opposing vertex parts of the capacitor portion supported by said first and second interconnecting lines to be held on said trench, said capacitor portion has cuts in proximity to said opposing vertex parts,
- said capacitor portion including
- an upper electrode coupled to said first interconnecting line,
- a lower electrode opposing said upper electrode and coupled to said second interconnecting line, and
- a ferroelectric thin film provided between said upper and lower electrodes, and
- the change of the capacitance value of said infrared detecting capacitor being detected to sense infrared radiation.
An infrared detecting element formed on a main surface of a substrate comprising an infrared detecting capacitor having a capacitance value changing according to temperature change caused by absorption of infrared radiation,
- said infrared detecting capacitor including
- a trench formed in said substrate,
- first and second interconnecting lines extending from both sides of said trench, and
- a capacitor portion shaped to have three pairs of opposing sides in plan view, one pair of opposing vertex parts of the capacitor portion supported by said first and second interconnecting lines to be held on said trench,
- said capacitor portion including
- an upper electrode coupled to said first interconnecting line,
- a lower electrode opposing said upper electrode and coupled to said second interconnecting line, and
- a ferroelectric thin film provided between said upper and lower electrodes, and
- the change of the capacitance value of said infrared detecting capacitor being detected to sense infrared radiation,
- wherein said trench has a predetermined depth from said main surface of said substrate.
An infrared two-dimensional image sensor formed on a main surface of a substrate comprising a plurality of pixel cells arranged in a form of matrix,
- said pixel cells each including an infrared detecting capacitor having a capacitance value changing according to temperature change caused by absorption of infrared radiation,
- said infrared detecting capacitor including
- a trench formed in said substrate,
- first and second interconnecting lines extending from both sides of said trench, and
- a capacitor portion shaped to have three pairs of opposing sides in plan view, one pair of opposing vertex parts of the capacitor portion supported by said first and second interconnecting lines to be held on said trench, said capacitor portion has cuts in proximity to said opposing vertex parts,
- said capacitor portion including
- an upper electrode coupled to said first interconnecting line,
- a lower electrode opposing said upper electrode and coupled to said second interconnecting line, and
- a ferroelectric thin film provided between said upper and lower electrodes, and
- the change of the capacitance value of said infrared detecting capacitor being detected to sense infrared radiation.
An infrared two-dimensional image sensor formed on a main surface of a substrate comprising a plurality of pixel cells arranged in a form of matrix,
- said pixel cells each including an infrared detecting capacitor having a capacitance value changing according to temperature change caused by absorption of infrared radiation,
- said infrared detecting capacitor including
- a trench formed in said substrate,
- first and second interconnecting lines extending from both sides of said trench, and
- a capacitor portion shaped to have three pairs of opposing sides in plan view, one pair of opposing vertex parts of the capacitor portion supported by said first and second interconnecting lines to be held on said trench,
- said capacitor portion including
- an upper electrode coupled to said first interconnecting line,
- a lower electrode opposing said upper electrode and coupled to said second interconnecting line, and
- a ferroelectric thin film provided between said upper and lower electrodes, and
- the change of the capacitance value of said infrared detecting capacitor being detected to sense infrared radiation,
- wherein said trench has a predetermined depth from said main surface of said substrate.
Dependencies are inferred from the claim text.