Semiconductor device and method of manufacturing the same
AssigneesCanon Sales Co., Inc., Semiconductor Process Laboratory Co., Ltd.
InventorsYoshimi Shioya, Kouichi Ohira, Kazuo Maeda
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Abstract
The present invention relates to a semiconductor device manufacturing method for forming an interlayer insulating film having a low dielectric constant by coating a copper wiring. The low dielectric constant insulating film is formed by reaction of a plasma of a film-forming gas containing an oxygen-containing gas of N2O, H2O, or CO2, ammonia (NH3), and at least one of an alkyl compound having a siloxane bond and methylsilane (SiHn(CH3)4−n: n=0, 1, 2, 3).
Claims11
A semiconductor device manufacturing method for forming an insulating film having a low dielectric constant on a substrate, comprising:
- providing a pair of parallel plate electrodes defining a space therebetween and holding the substrate on one of the electrodes;
- introducing, into the space between the electrodes, a flow of a film-forming gas containing (1) at least one silicon compound selected from the group consisting of alkyl compounds having a siloxane bond and methylsilanes (SiHn(CH3)4−n:
- n=0, 1, 2, 3), (2) an oxygen-containing gas selected from the group consisting of N2O, H2O and CO2, and (3) ammonia (NH3);
- setting the ratio of flow rate of ammonia to flow rate of the at least one silicon compound to provide the insulating film with a relative dielectric constant of 3.1 or less;
- and
- converting the film-forming gas into a plasma by application of AC power to the electrodes for reaction to form the insulating film.
Dependencies are inferred from the claim text.