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US 6,673,722 B1Granted
Microwave enhanced CVD system under magnetic field
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
Estimating the term…
Abstract
An improved chemical vapor deposition or etching is shown in which cyclotron resonance and photo or plasma CVD cooperate to deposit a layer with high performance at a high deposition speed. The high deposition speed is attributed to the cyclotron resonance while the high performance is attributed to the CVDs.
Claims42
A method of manufacturing a semiconductor device comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber;
- introducing a reactive gas into said reaction chamber;
- positioning a substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
5 more elements
A method of manufacturing a semiconductor device comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber;
- placing a substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said resonance chamber;
- and then
- forming a film on the surface by plasma CVD.
4 more elements
A method of manufacturing a semiconductor device comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the resonance chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber;
- introducing a reactive gas into said reaction chamber;
- positioning a substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward said resonance chamber;
- exhausting said reaction chamber with an exhaust means wherein a port of said exhaust means is positioned between said substrate and said resonance chamber;
- and
- forming an insulating film on said surface by plasma CVD.
5 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber and has a side wall which extends perpendicularly;
- introducing a reactive gas into said reaction chamber;
- positioning a single substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward a single opening of said resonance chamber;
- and
- depositing a film on the surface of the surface of said substrate by plasma CVD.
4 more elements
A plasma processing method comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber and has a side which extends perpendicularly;
- introducing a first gas into said resonance chamber;
- exciting said first gas by said electron cyclotron resonance in said resonance chamber;
- introducing a second gas into said reaction chamber wherein said second gas is excited by the excited first gas;
- positioning a single substrate having a surface in the reaction chamber wherein said substrate is horizontally arranged so that said surface faces toward a single opening resonance chamber;
- and
- depositing a film on the surface of said substrate by plasma CVD.
6 more elements
A method of manufacturing a semiconductor device comprising:
- introducing a microwave into a resonance chamber;
- inducing a magnetic field in the plasma forming chamber to form an electron cyclotron resonance in order to form a plasma;
- providing a reaction chamber adjoining the resonance chamber wherein said reaction chamber is positioned above said resonance chamber and has a side wall which extends perpendicularly;
- introducing a first gas into said resonance chamber;
- introducing a second gas into said reaction chamber wherein said second gas is excited by the excited first gas;
- positioning a semiconductor in the reaction chamber wherein said semiconductor is horizontally arranged so that said semiconductor faces toward a single opening of said resonance chamber;
- and
- depositing an insulating film on the surface of said semiconductor by plasma CVD.
5 more elements
Dependencies are inferred from the claim text.