Methods for forming aluminum metal wirings

A method of forming an aluminum wiring within a contact hole or groove of a substrate, wherein the substrate includes an upper main surface and wherein the contact hole or groove is defined by an interior surface extending below the upper main surface of the substrate, said method comprising:

• forming an intermediate layer which includes nitrogen over the main surface of a substrate and over the interior surface of the contact hole or groove;
• treating a first surface portion of the intermediate layer which is located over the main surface of the substrate with a plasma to form a passivity layer at the first surface portion of the intermediate layer;
• and
• chemical vapor deposition (CVD) depositing an aluminum film only over a second surface portion of the intermediate layer which is located over the interior surface of the contact hole or groove, wherein said treating with plasma of the first surface portion of the intermediate layer prevents the CVD depositing of the aluminum film over the first surface portion of the intermediate layer;
• depositing an aluminum layer over the passivity layer and over the aluminum film so as to fill the contact hole or groove;
• wherein said forming an intermediate layer, said treating with a plasma, and said CVD-Al depositing are conducted without an intervening vacuum break.

A method of forming an aluminum wiring within a contact hole or groove of a substrate, wherein the substrate includes an upper main surface and wherein the contact hole or groove is defined by an interior surface extending below the upper main surface of the substrate, said method comprising:

• forming a first intermediate layer over the main surface of a substrate and over the interior surface of the contact hole or groove;
• forming a second intermediate layer which includes nitrogen over first intermediate layer;
• treating a first surface portion of the second intermediate layer which is located over the main surface of the substrate with a plasma to form a passivity layer at the first surface portion of the second intermediate layer;
• and
• chemical vapor deposition (CVD) depositing an aluminum film only over a second surface portion of the second intermediate layer which is located over the interior surface of the contact hole or groove, wherein said treating with plasma of the first surface portion of the second intermediate layer prevents the CVD depositing of the aluminum film over the first surface portion of the second intermediate layer;
• depositing an aluminum layer over the passivity layer and over the aluminum film so as to fill the contact hole or groove;
• wherein said forming a second intermediate layer, said treating with a plasma, and said CVD depositing are conducted without an intervening vacuum break.

A method of forming an aluminum wiring within a contact hole or groove of a substrate, wherein the substrate includes an upper main surface and wherein the contact hole or groove is defined by an interior surface extending below the upper main surface of the substrate, said method comprising:

• forming an intermediate layer which includes nitrogen over the main surface of a substrate and over the interior surface of the contact hole or groove;
• partially etching the intermediate layer to obtain a partially etched intermediate layer;
• treating a first surface portion of the partially etched intermediate layer which is located over the main surface of the substrate with a plasma to form a passivity layer at the first surface portion of the partially etched intermediate layer;
• and
• chemical vapor deposition (CVD) depositing an aluminum film only over a second surface portion of the partially etched intermediate layer which is located over the interior surface of the contact hole or groove, wherein said treating with plasma of the first surface portion of the partially etched intermediate layer prevents the CVD-Al depositing of the aluminum film over the first surface portion of the partially etched intermediate layer;
• depositing an aluminum layer over the passivity layer and over the aluminum film so as to fill the contact hole or groove;
• wherein said partially etching the intermediate layer, said treating with a plasma, and said CVD depositing are conducted without an intervening vacuum break.