US 6,673,704 B2 · Semiconductor device and method of manufacturing the same

Abstract

A method of manufacturing semiconductor device which comprises the steps of forming an insulating film on an Si substrate provided with a wiring layer, forming a contact hole connected to the wiring layer and a wiring groove in the insulating film, filling the contact hole with an Si film, successively forming an Al film and a Ti film all over the substrate, performing a heat treatment thereby to substitute the Al film for the Ti film, and to allow the Si film to be absorbed by the Ti film, whereby filling the contact hole and wiring groove with the Al film, and removing a Ti/Ti silicide which is consisting of Ti silicide formed through the absorption of the Si film by the Ti film and a superfluous Ti, whereby filling the contact hole with an Al plug and filling the wiring groove with an Al wiring.

Claims26

Dependent claims

A method of manufacturing a semiconductor device which comprises:

forming an insulating film on a semiconductor substrate;
forming a recessed portion in said insulating film;
forming a liquid phase containing a conductive element and a substance having a lower melting point than that of said conductive element in said recessed portion;
forming a conductive film at least in said recessed portion by shifting the composition of said liquid phase from an equilibrium composition to a composition where said conductive element is excessive, thereby precipitating said conductive element;
and
removing all of materials from the surface of said insulating film excluding those formed on said recessed portion.

3 more elements

A method of manufacturing semiconductor device which comprises:

forming an insulating film on a semiconductor substrate;
forming in said insulating film a recessed portion in which a thin film comprising a material exhibiting a higher surface energy than that of said insulating film is at least partially formed;
forming in said insulating film a liquid phase containing a conductive element and a substance having a lower melting point than that of said conductive element;
forming a conductive film at least in said recessed portion by shifting the composition of said liquid phase from an equilibrium composition to a composition where said conductive element is excessive, thereby precipitating said conductive element;
and
removing all of materials from the surface of said insulating film excluding those formed on said recessed portion.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

10/189,598Filed 8 Jul 2002 · division

Priority

JP 8-34426424 Dec 1996

Published

US 2002/0192938 A119 Dec 2002

Granted

6 Jan 2004

Term ends

Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10W 20/055
Of conductive barrier, adhesion or liner layers: by formation methods other than physical vapour deposition [PVD], chemical vapour deposition…
H10P 14/44
Using a gas or vapour: physical vapour deposition [PVD]
H10W 20/033
Of conductive barrier, adhesion or liner layers: in openings in dielectrics
H10W 20/034
In openings in dielectrics: bottomless barrier, adhesion or liner layers

Family

Application08/997,328Parent of this division · filed 23 Dec 1997

Application09/556,961Parent of this division · filed 21 Apr 2000

US 2002/0192938 A1Pre-grant publication · published 19 Dec 2002

US 6,440,843 B1Parent of this division

US 6,071,810 AParent of this division

US 6,673,704 B2This patent

From the US filing history. Foreign family members aren’t listed.

Semiconductor device and method of manufacturing the same

Life of this patent

Semiconductor device and method of manufacturing the same

Life of this patent

Abstract

Claims26