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US 6,673,702 B2Granted
Method for producing a semiconductor device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenzi Orita, Masahiro Ishida, Masaaki Yuri
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Abstract
A method for producing a semiconductor device of the present invention includes: heating a first semiconductor layer made of a Group III nitride-based compound semiconductor in gas containing nitrogen atoms; and growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer.
Claims4
A method for producing a semiconductor device, comprising:
- (a) soaking a first semiconductor layer made of a Group III nitride-based compound semiconductor in an alkaline aqueous solution under a condition that a current is not flowing through the first semiconductor layer and under a condition that light having an energy equal to or higher than a bandgap energy of the Group III nitride-based compound semiconductor is not radiated to the first semiconductor layer;
- and
- (b) after the process (a), growing a second semiconductor layer made of a Group III nitride-based compound semiconductor on the first semiconductor layer,
- wherein an oxide layer or an impurity on a surface of the first semiconductor layer is removed by the soaking, substantially without etching the first semiconductor layer.
1 more element
Dependencies are inferred from the claim text.