Thin film semiconductor package utilizing a glass substrate with composite polymer/metal interconnect layers
AssigneeMegic Corporation
InventorsMou-Shiung Lin, Jin-Yuan Lee, Ching-Cheng Huang
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Abstract
A thin film semiconductor die circuit package is provided utilizing low dielectric constant (k) polymer material for the insulating layers of the metal interconnect structure. Five embodiments include utilizing glass, glass-metal composite, and glass/glass sandwiched substrates. The substrates form the base for mounting semiconductor dies and fabricating the thin film interconnect structure.
Claims15
A method of fabricating the thin film semiconductor die package structure comprising:
- providing a metal substrate;
- forming a glass layer with cavities for mounting semiconductor dies on said metal substrate;
- sequentially forming polymer insulating layers and metal interconnect layers;
- forming a layer of solder;
- and
- reflowing the solder to form solder bumps.
A method of fabricating a thin film semiconductor die package structure comprising:
- providing a glass substrate with semiconductor dies mounted on the active surface;
- filling polymer or epoxy between and over the backside of said semiconductor dies, to obtain a planarized surface;
- grinding said backside of said semiconductor dies, to a desired thickness of said semiconductor dies and said polymer or epoxy to obtain a planarized surface;
- mounting a second glass substrate on the backside of the semiconductor dies;
- grinding the first glass substrate to a desired glass thickness;
- etching holes in said first glass substrate to expose said semiconductor dies;
- sequentially forming polymer insulating layers and metal interconnect layers over said first glass substrate;
- depositing a layer of solder;
- and
- reflowing the solder to form solder bumps.
A method of fabricating a thin film semiconductor die package structure comprising:
- providing a glass substrate with semiconductor dies mounted on the active surface;
- filling polymer or epoxy between and over the backside of said semiconductor dies,
- grinding said backside of said semiconductor dies, to a desired thickness of said semiconductor dies and said polymer or epoxy to obtain a planarized surface;
- mounting a second glass substrate on the backside of the semiconductor dies;
- removing said first glass substrate;
- sequentially forming polymer insulating layers and metal interconnect layers over said semiconductor dies;
- depositing a layer of solder;
- and
- reflowing the solder to form solder bumps.
Dependencies are inferred from the claim text.