Post trench fill oxidation process for strained silicon processes
AssigneeAdvanced Micro Devices, Inc.
InventorsFarzad Arasnia, Minh-Van Ngo, Qi Ziang
Life of this patent
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Abstract
A method of manufacturing an integrated circuit (IC) utilizes a shallow trench isolation (STI) technique. The shallow trench isolation technique is used in strained silicon (SMOS) process. The liner for the trench is formed in a high temperature process after the trench is filled with an insulative material. The insulative material is provided in a low temperature process.
Claims20
A method of manufacturing an integrated circuit having trench isolation regions in a substrate including germanium, the method comprising:
- forming a silicon nitride layer above the substrate;
- selectively etching the silicon nitride layer to form apertures associated with locations of the trench isolation regions;
- forming trenches in the substrate at the locations;
- providing trench fill material in the trenches at a low temperature;
- and
- forming oxide liners in the trenches of the substrate in a high temperature process.
A method of forming shallow trench isolation regions in a semiconductor layer, the method comprising:
- providing a hard mask layer above the semiconductor layer;
- providing a photoresist layer above the hard mask layer;
- selectively removing portions of the photoresist layer at locations in a photolithographic process;
- removing the hard mask layer at the locations;
- forming trenches in the hard mask layer under the locations;
- filling the trenches with an insulative material in a low temperature process;
- and
- forming a liner in the trenches in a high temperature process.
A method of forming a liner in a trench in a germanium containing layer, the method comprising:
- selectively etching the germanium containing layer to form the trench;
- filling the trench with an insulative material in a low temperature process;
- and
- performing high temperature oxidation to form the liner in the trench.
Dependencies are inferred from the claim text.