Method for resistance switch using short electric pulses

A method of changing the resistance of a perovskite metal oxide thin film device with a resistance-change-producing pulse, wherein the device includes a silicon substrate having a silicon oxide layer on the surface thereof;

• a first metal layer formed on the silicon oxide, wherein the metal of the first metal layer is taken from the group of metals consisting of platinum and iridium;
• a perovskite metal oxide thin film formed on the first metal layer to a thickness of between about 50 nm to 500 nm, and which includes a crystalline layer;
• a second metal layer on the perovskite metal oxide, wherein the metal of the second metal layer is taken from the group of metals consisting of platinum and iridium;
• comprising:
• changing the resistance of the device by varying the duration of a resistance-change-producing pulse.

A method of changing the resistance of a perovskite metal oxide thin film device with a resistance-change-producing pulse, wherein the device includes a silicon substrate having a silicon oxide layer on the surface thereof;

• a first metal layer formed on the silicon oxide, wherein the metal of the first metal layer is taken from the group of metals consisting of platinum and iridium;
• a perovskite metal oxide thin film formed on the first metal layer to a thickness of between about 50 nm to 500 nm, and which includes a crystalline layer;
• a second metal layer on the perovskite metal oxide, wherein the metal of the second metal layer is taken from the group of metals consisting of platinum and iridium;
• comprising:
• changing the resistance of the device by varying the duration of a resistance-change-producing pulse, which includes decreasing the resistance of the device by applying a voltage of between about one volt to four volts for a period of between about 1 μsec to 50 ms and increasing the resistance of the device by applying a voltage of between about two volts to five volts for a period of between about 5 ns to 800 ns.