Semiconductor device and method of manufacturing the same

A semiconductor device manufacturing method comprising the steps of:

• forming a first insulating film over a semiconductor substrate;
• forming a first conductive film, a ferroelectric film, and a second conductive film sequentially on the first insulating film;
• forming an upper electrode of a capacitor by patterning the second conductive film;
• forming a dielectric film of the capacitor by patterning the ferroelectric film;
• forming a lower electrode of the capacitor by patterning the first conductive film;
• forming a first capacitor protection insulating film covering the dielectric film and the upper electrode;
• forming a second capacitor protection insulating film, which covers the first capacitor protection insulating film, by a chemical vapor deposition method in a state that a bias voltage is not applied to the semiconductor substrate;
• and
• forming a second insulating film on the second capacitor protection insulating film by the chemical vapor deposition method in a state that the bias voltage is applied to the semiconductor substrate.