Method of forming capacitor of a semiconductor memory device
AssigneeHynix Semiconductor Inc.
InventorsKyong-Min Kim, Han-Sang Song, Ki-Seon Park
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Abstract
A capacitor having a tantalum-contained-dielectric layer is formed by a fabrication method including the steps of: forming a lower electrode on a semiconductor substrate; forming a dielectric layer containing Ta element on the lower electrode; forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition; forming an oxidized TiN layer by performing an oxidation process on the dielectric layer; and forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a plasma vapor deposition (PVD).
Claims19
A method of forming a capacitor of a semiconductor device, comprising the steps of:
- forming a lower electrode on a semiconductor substrate;
- forming a dielectric layer containing Ta element on the lower electrode;
- forming a first TiN layer of an upper electrode on the dielectric layer by using atomic layer deposition;
- forming an oxidized TiN layer by performing an oxidation process on the dielectric layer;
- and
- forming a second TiN layer of the upper electrode on the oxidized TiN layer by using a physical vapor deposition (PVD).
Dependencies are inferred from the claim text.