Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials

A method for manufacturing a semiconductor apparatus;

• the semiconductor apparatus including a substantially integral monolithic semiconductor component including a plurality of materials presenting a plurality of substantially coplanar lands;
• the method comprising the steps of:
• (a) providing a monocrystalline silicon substrate;
• said substrate presenting at least one first land of said plurality of lands;
• said monocrystalline silicon being a first material of said plurality of materials;
• (b) trenching said substrate from a first side of said substrate to effect at least one cavity in said substrate;
• said at least one cavity being appropriately dimensioned to receive at least one semiconductor piece in a finished orientation;
• said finished orientation presenting at least one second land of said plurality of lands generally coplanar with said at least one first land;
• (c) growing a monocrystalline perovskite oxide on said first side of said substrate to establish an accommodating layer at said first side of said substrate and within said at least one cavity;
• said monocrystalline perovskite oxide being a second material of said plurality of materials;
• (d) forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between said accommodating layer and said monocrystalline silicon substrate;
• (e) growing a template for said at least one semiconductor piece on said oxide to establish a process piece;
• said at least one semiconductor piece being at least a portion of the semiconductor apparatus;
• (f) growing said at least one semiconductor piece on said process piece;
• said at least one semiconductor piece being constructed of a monocrystalline compound semiconductor material;
• said monocrystalline compound semiconductor material being a third material of said plurality of materials;
• (g) selectively removing predetermined portions of said at least one semiconductor piece and said accommodating layer to establish said at least one semiconductor piece in said finished orientation;
• (h) depositing a cap layer on said substantially integral monolithic semiconductor component;
• and
• (i) selectively removing said cap layer to establish a substantially planar face;
• said planar face being displaced from said plurality of lands by a predetermined distance.