Method and apparatus for a monolithic integrated mesfet and p-i-n optical receiver
AssigneeInternational Business Machines Corporation
InventorsRandolph B. Heineke, William K. Hogan, Scott Allen Olson, Clint Lee Schow
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Abstract
Disclosed is a semiconductor structure and manufacturing process for making an integrated FET and photodetector optical receiver on a semiconductor substrate. A FET is formed by forming at least one p channel in a p-well of the substrate and forming at least one n channel in the p-well of the substrate. A p-i-n photodetector is formed in the substrate by forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p well of the FET and forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.
Claims8
A method of making an integrated field effect transistor (FET) and photodetector optical receiver, comprising:
- providing a semiconductor substrate;
- forming a FET, including:
- forming at least one p channel in a p-well of the substrate;
- forming at least one n channel in the p-well of the substrate;
- forming a p-i-n photodetector in the substrate, including:
- forming at least one p channel in an absorption region of the substrate when forming the at least one p channel in the p-well of the FET;
- forming at least one n channel in the absorption region of the substrate when forming the at least one n channel in the p-well of the FET.
Dependencies are inferred from the claim text.