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US 6,673,644 B2Granted
Porous gas sensors and method of preparation thereof
AssigneeGeorgia Tech Research Corporation
InventorsJames L. Gole, Lenward T. Seals, Peter J. Hesketh
Life of this patent
Estimating the term…
Abstract
A sensor is disclosed. A representative sensor includes a silicon substrate having a porous silicon region. A portion of the porous silicon region has a front contact is disposed thereon. The contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
Claims17
A sensor, comprising:
- a silicon substrate having a porous silicon region, wherein a front contact is disposed on a portion of the porous silicon region, wherein the contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms, and wherein the resistivity is between about 0.01 ohm/centimeter squared (cm2) and 1 ohm/cm2.
A gas chromatograph, comprising:
- a detector including a gas sensor that includes a silicon substrate having a porous silicon region, wherein a front contact is disposed on a portion of the porous silicon region, and wherein the contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
A liquid chromatograph, comprising:
- a detector including a gas sensor that includes a silicon substrate having a porous silicon region, wherein a front contact is disposed on a portion of the porous silicon region, and wherein the contact resistance between the porous silicon region and the front contact is between about 10 ohms and 100 ohms.
Dependencies are inferred from the claim text.