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US 6,673,635 B1Granted
Method for alignment mark formation for a shallow trench isolation process
AssigneeAdvanced Micro Devices, Inc.
InventorsKay Hellig, Douglas J. Bonser, Srikanteswara Dakshina-Murthy
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Abstract
Methods are presented for fabrication of alignment features of a desired depth, and shallow trench isolation (STI) features in Silicon-On-Insulator (SOI) material. Specific embodiments require no more than two lithography and etch processes, which represents an improvement over current methodology requiring three lithography and etch processes in order to produce the desired features during manufacture of a semiconductor device.
Claims14
A method comprising:
- forming a first photoresist mask over a substrate to define a first opening location;
- forming the first opening through a semiconductor comprising layer;
- and
- forming the first opening partially through a dielectric layer underlying the semiconductor comprising layer, wherein the dielectric layer has a first thickness under the semiconductor layer and a second thickness within the first opening:
- forming a second photoresist mask over the substrate to define a second opening location for a trench isolation region and a third opening location for an alignment feature, wherein the third opening location is within the first opening;
- and
- forming the trench isolation feature and the alignment feature.
4 more elements
Dependencies are inferred from the claim text.