Attenuating extreme ultraviolet (EUV) phase-shifting mask fabrication method
OwnerKouros Ghandehari, Bruno LaFontaine +1inventors
InventorsKouros Ghandehari, Bruno LaFontaine, Bhanwar Singh
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Abstract
An exemplary method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask is described. This method can include providing a multi-layer mirror over an integrated circuit substrate or a mask blank, providing a buffer layer over the multi-layer mirror, providing a dual element material layer over the buffer layer, and selectively growing features on the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process when depositing the dual element layer.
Claims15
A method of forming an attenuating extreme ultraviolet (EUV) phase-shifting mask, the method comprising:
- providing a multi-layer mirror over an integrated circuit substrate or a mask blank;
- providing a buffer layer over the multi-layer mirror;
- and
- providing a dual element material layer over the buffer layer by selectively growing features above the integrated circuit substrate or mask blank using a photon assisted chemical vapor deposition (CVD) process.
A method of photon assisted chemical vapor deposition (CVD) to deposit material in the formation of an attenuating phase-shifting mask, the method comprising:
- providing a chemical vapor in a vapor chamber containing an integrated circuit substrate;
- and
- selectively applying a laser to portions of the integrated circuit substrate to form features at radiated portions of the substrate.
Dependencies are inferred from the claim text.