Pattern formation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsShinji Kishimura, Akiko Katsuyama, Masaru Sasago
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Abstract
A resist film is formed by applying, on a semiconductor substrate, a resist material including at least one atom or group selected from the group consisting of a halogen atom, a cyano group, a nitro group, an alkoxy group, an amino group, an alkyl group, a trifluoromethyl group and a mercapto group. The resist film is irradiated with exposing light of a wavelength of a 1 nm through 180 nm band for pattern exposure, and the resist film is developed after the pattern exposure, so as to form a resist pattern.
Claims15
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a chemical amplified resist material comprising a base polymer wherein said base polymer a fluoroalkyl group in a side chain of said base polymer;
- irradiating said resist film for pattern exposure with Xe2 laser beam, F2 laser beam, Kr2 laser beam, ArKr laser beam or Ar2 laser beam;
- and
- forming a resist pattern by developing the pattern-exposed resist film.
A pattern formation method comprising the steps of:
- forming a resist film by applying, on a substrate, a chemical amplified resist material comprising a base polymer, wherein said base polymer includes a triflouromethyl group on a main chain of said polymer;
- irradiating said resist film for pattern exposure with a Xe2 laser beam, F2 laser beam, Kr2 laser beam, ArKr laser beam or an Ar2 laser beam;
- and
- forming a resist pattern by developing the pattern-exposed resist film.
Dependencies are inferred from the claim text.