Method of making an integrated circuit using a reflective mask

A method for obtaining a desired pattern of exposed photoresist on a semiconductor wafer, comprising:

• providing a mask substrate having a reflective layer;
• depositing an absorber layer over the reflective layer;
• depositing a repairable layer over the absorber layer;
• depositing a first photoresist layer over the repairable layer;
• patterning the first photoresist layer according to the desired pattern;
• transferring the desired pattern from the photoresist layer to the repairable layer;
• inspecting the repairable layer to determine if it has the desired pattern, wherein the inspecting occurs prior to any absorber layer being formed over the repairable layer;
• repairing the repairable layer to the desired pattern if inspecting showed that the repairable layer did not have the desired pattern;
• transferring the desired pattern from the repairable layer to the absorber layer to form a reflective mask;
• applying a second photoresist layer to the semiconductor wafer;
• and
• reflecting radiation off the reflective mask to expose the second photoresist with the desired pattern.

A method for forming a desired pattern on a semiconductor wafer, comprising;

• providing a mask substrate having a reflective layer;
• depositing an absorber layer, which is selectively etchable with respect to the reflective layer, on the reflective layer;
• depositing an ARC layer over the absorber layer, wherein the ARC layer is a dielectric material;
• patterning the ARC layer according to the desired pattern;
• inspecting the ARC layer after patterning the ARC layer, wherein the inspecting occurs prior to forming any absorber layer over the ARC layer;
• repairing the ARC layer to the desired pattern if inspecting showed that the ARC layer did not have the desired pattern;
• transferring the desired pattern from the ARC layer to the absorber layer to form a reflective mask;
• using the reflective mask to form the desired pattern on the semiconductor wafer.