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AssigneeSamsung Electronics Co., Ltd.
InventorsSang-jun Choi, Hyun-woo Kim
Estimating the term…
There are provided a photosensitive polymer having a copolymer of alkyl vinyl ether and a resist composition containing the same. The photosensitive polymer includes a copolymer of alkyl vinyl ether and maleic anhydride, represented by the following structure: wherein X is one of a linear alkyl vinyl ether and a cyclic alkyl vinyl ether, which are respectively represented by the structures wherein y is one of the integer values 1 through 4, R1 is one of a hydrogen atom and a methyl group, R2 is a C1 to C20 hydrocarbon, and R3 is one of a hydrogen atom, a C1 to C3 alkyl group and an alkoxy group.
A photosensitive terpolymer comprising:
A photosensitive polymer comprising:
A photosensitive polymer represented by the following structure:
A resist composition comprising:
A resist composition comprising:
Dependencies are inferred from the claim text.
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From the US filing history. Foreign family members aren’t listed.
Anhydrides, e.g. cyclic anhydrides: maleic anhydride
Monomers containing no hetero atoms other than the ether oxygen: carbocyclic compounds
With acrylic or methacrylic acids: c10or C11-acrylate, e.g. isodecyl acrylate, isobornyl acrylate or 2-naphthyl acrylate
Copolymers of cyclic compounds containing no unsaturated aliphatic radicals in a side chain, and having one or more carbon-to-carbon double…
Term ended 7 Nov 2020 (estimated)
1. Field of the Invention
The present invention relates to a photosensitive polymer and to a chemically amplified photoresist composition containing the same, and more particularly, the present invention relates to a photosensitive polymer which includes a copolymer of alkyl vinyl ether and to a resist composition containing the same.
2. Description of the Related Art
The above objects and advantages of the present invention will become more apparent from the description of the preferred embodiments that follows with reference to the attached drawings in which:
FIG. 1 illustrate a Fourier transfer infrared (FT-IR) spectrum result for a polymer contained in a resist composition according to the present invention; and
FIG. 2 illustrates evaluation results of contrast characteristics of a resist composition according to the present invention.
The present invention is directed to a new polymer which overcomes disadvantages of existing polymers and provides a resist composition having excellent lithographic performance characteristics.
A resist composition according to the present invention is a photosensitive polymer having a new structure and includes a copolymer of alkyl vinyl ether monomers as a basic unit. In order to prepare the copolymer of alkyl vinyl ether monomers, an alkyl vinyl ether monomer and at least one other comonomer must be copolymerized. Here, examples of suitable comonomers include maleic anhydride, maleimide and the like. Also, examples of other comonomers suitable in the present invention include acrylate, methacrylate, fumarate, acrylonitrile, norbornene derivatives, styrene derivatives and the like.
Conventional radical polymerization methods can be used in preparing the copolymer. In addition, the copolymer can be prepared by cationic polymerization or anionic polymerization.