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US 6,673,387 B1Granted
Control of oxide layer reaction rates
AssigneeAmerican Superconductor Corporation
InventorsWei Zhang, Qi Li, Martin W. Rupich
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Abstract
A process is described for formation of oxide films independent of thickness from precursor films comprising metals, metal oxides, and metal fluorides with properties and structures similar to those previously only obtained in thin films, for example less than about 0.4 microns.
Claims47
A method of forming an oxide superconductor, the method comprising:
- providing a composite in a reaction vessel, the composite comprising a metal oxyfluoride intermediate on a surface of a first layer;
- heating the reaction vessel to a first temperature while introducing into the reaction vessel a first gas mixture at a first gas flow, rate, the first temperature being less than a process temperature;
- and
- heating the reaction vessel at the process temperature while introducing into the reaction vessel a second gas mixture to form the oxide superconductor on the surface of the first layer, the second gas mixture having a second gas flow rate that is different from the first gas flow rates,
- wherein the first and second gas mixtures and the first and second gas flow rates are selected to control an amount of a reactant delivered to the surface of the composite and an amount of a reaction product removed from the surface of the composite, the reactant being capable of reacting with the metal oxyfluoride intermediate while forming the oxide superconductor, the reaction product is evolved from the composite during formation of the oxide superconductor.
2 more elements
A method of forming an oxide superconductor, the method comprising:
- providing a composite in a reaction vessel, the composite comprising a metal oxyfluoride intermediate on a surface of a first layer;
- heating the reaction vessel to a first temperature while introducing into the reaction vessel a first gas mixture at a first gas flow rate, the first temperature being less than a process temperature;
- and
- heating the reaction vessel at the process temperature while introducing into the reaction vessel a second gas mixture to form the oxide superconductor on the surface of the first layer, the second gas mixture having a second gas flow rate that is different from the first gas flow rate,
- wherein the first and second gas mixtures comprise a reactant that reacts with the metal oxyfluoride intermediate while forming the oxide superconductor, and a rate of delivery of the reactant to a surface of the composite for the first gas flow rate is different from a rate of delivery of the reactant to the surface of the composite for the second gas flow rate.
2 more elements
Dependencies are inferred from the claim text.