System and method for fabricating silicon targets
AssigneeSharp Laboratories of America, Inc.
InventorsApostolos Voutsas, John Hartzell
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Abstract
A method for fabricating silicon tiles and silicon tile targets has been provided, such as may be used in the sputter deposition of thin film transistor (TFT) silicon films. The method describes processes of cutting the tiles, beveling the tiles edges, etching the tiles to minimize residual damage caused by cutting the tiles, polishing the tiles to a specified flatness, and attaching the tiles to a backing plate. All these processes are performed with the aim of minimizing contamination and particle formations when the target is used for sputter deposition.
Claims29
In the fabrication of integrated circuit (IC) sputter deposited silicon films, a silicon (Si) target tile comprising:
- a silicon tile having a predetermined thickness;
- silicon tile treated top and bottom surface edges;
- silicon tile treated corners;
- and
- a predetermined flatness across the top and bottom surfaces of the silicon tile.
In the fabrication of integrated circuit (IC) sputter deposited silicon films, a silicon (Si) target comprising:
- a backing plate;
- a plurality of silicon tiles attached to the backing plate;
- and
- wherein each silicon tiles has a predetermined thickness, treated top and bottom surface edges, treated corners, and a predetermined flatness across the top and bottom surfaces.
Dependencies are inferred from the claim text.