Chemical plasma cathode
AssigneeAxcelis Technologies, Inc.
InventorsJoel Penelon, Ivan Berry
Life of this patent
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Abstract
A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.
Claims10
An apparatus for generating a plasma in a gas for use during silicon wafer production, said apparatus comprising:
- a) a gas source for supplying a process gas to a reaction zone;
- b) at least one process gas nozzle in communication with the gas source;
- c) at least one burner, for igniting the process gas and providing thermal energy to the reaction zone;
- d) a pair of opposingly disposed electrodes for generating and passing a current in the process gas within the reaction zone;
- and
- e) a power source connected to the electrodes.
An apparatus for generating a plasma in a gas for use during silicon wafer the apparatus comprising:
- a) a gas source for supplying a process gas to a reaction zone;
- b) at least one process gas pipe in communication with the gas source for supplying the process gas to the reaction zone;
- c) at least one burner for igniting the process gas and providing a thermal energy source to the reaction zone;
- and
- d) a second energy source for generating the plasma in the process gas within the reaction zone.
Dependencies are inferred from the claim text.