Production of low defect, crack-free epitaxial films on a thermally and/or lattice mismatched substrate
AssigneesMatsushita Electric Industrial Co., Ltd., CBL Technologies, Inc.
InventorsGlenn S. Solomon, David J. Miller, Tetsuzo Ueda
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Abstract
A method for the production of a crack-free epitiaxial film having a thickness greater than that which can be achieved by continuous epitaxial crystal growth. This epitaxial film can be used as is in a device, used as a substrate platform for further epitaxy, or separated from the initial substrate material and used as a free-standing substrate platform. The method utilizes a defect-rich initial layer that absorbs epitaxially derived stresses and another layer, which is not defect-rich, which planarizes the crystal growth front, if necessary and provides high quality epitaxial region near the surface.
Claims22
A method for the production of a crack-free heteroepitaxial layer comprising the following steps:
- a) providing a substrate
- b) growing a buffer layer on the substrate at a lower temperature than one or more subsequent growths
- c) growing on the buffer layer a defect-rich first epitaxial layer, with reduced residual stress due to the density of defects in this layer
- d) growing a high quality, low defect density second layer atop the first layer, at a growth condition different from that of the defect-rich first epitaxial layer, wherein the low defect density second layer entirely contacts the defect-rich first epitaxial layer.
A method, for the production of a crack-free heteroepitaxial layer comprising the following steps:
- a) providing a substrate
- b) growing a defect-rich first epitaxial layer, with reduced residual stress due to the density of defects in this layer
- c) growing a high quality, low defect density second layer atop the first layer, wherein the low defect density second layer entirely contacts the defect-rich first epitaxial layer
- wherein the substrate is removed after the growth of the first epitaxial layer.
A method, for the production of a crack-free heteroepitaxial layer comprising the following steps:
- a) providing a substrate
- b) growing a defect-rich first epitaxial layer, with reduced residual stress due to the density of defects in this layer
- c) growing a high quality, low defect density second layer atop the first layer, wherein the low defect density second layer entirely contacts the defect-rich first epitaxial layer;
- and
- d) growing a third layer over the substrate before growing the first layer,
- wherein the substrate is removed after the growth of the first or second layer.
Dependencies are inferred from the claim text.