Shallow photonic bandgap device
AssigneeSiOptical, Inc.
InventorShrenik Deliwala
Life of this patent
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Abstract
A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.
Claims27
A photonic band gap device, comprising:
- a Silicon-On-Insulator (SOI) wafer including an upper silicon layer and an insulator layer;
- a waveguide at least partially formed in the SOI wafer, the waveguide having a first surface and a second surface, the second surface being substantially parallel to, and spaced from, the first surface;
- and
- at least one photonic crystal region located within the waveguide, the photonic crystal region comprising:
- a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends for a distance toward the second surface but does not reach the second surface, further wherein a first dielectric region having a first dielectric constant range is projected from the first surface to the second surface in a second cross-sectional shape generally corresponding to the first cross-sectional shape, the region within the waveguide that surrounds the first dielectric region having a second dielectric range.
A photonic band gap device, comprising:
- a Silicon-On-Insulator (SOI) wafer including an upper silicon layer and an insulator layer, wherein the upper silicon layer is 10 microns or less thick;
- a waveguide at least partially formed in the SOI wafer, the waveguide having a first surface and a second surface, the second surface being parallel to the first surface;
- and
- at least one photonic crystal region located within the waveguide, the photonic crystal region comprising:
- a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends from the first surface to the second surface.
A photonic band gap device, comprising:
- a wafer including an upper silicon layer and an insulator layer;
- a waveguide at least partially formed in the wafer, the waveguide having a first surface and a second surface, the second surface being substantially parallel to, and spaced from, the first surface;
- and
- at least one photonic crystal region located within the waveguide, the photonic crystal region comprising:
- a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends for a distance toward the second surface but does not reach the second surface, further wherein a first dielectric region having a first dielectric constant range is projected from the first surface to the second surface in a second cross-sectional shape generally corresponding to the first cross-sectional shape, the region within the waveguide that surrounds the first dielectric region having a second dielectric range.
Dependencies are inferred from the claim text.