Multilayered diffusion barrier structure for improving adhesion property
AssigneeSimplus Systems Corporation
InventorsTue Nguyen, Tai Dung Nguyen
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Abstract
A method has been provided for improving the adhesion of copper to a nitrided metal diffusion barrier material, such as TiN, in an integrated circuit substrate. The method provided a multilayered diffusion barrier structure, comprising a conducting diffusion barrier layer and a poorly conducting adhesion-promoter layer in selected locations. The formation of a poorly conducting adhesion-promoter layer in selected locations permits the optimization of both contact resistance and adhesion property. The poorly conducting adhesion-promoter layer is formed either by the partial incorporation of oxygen into the diffusion barrier or by deposition in an oxygen ambient.
Claims20
A method to form a multilayered diffusion barrier structure on an underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the method comprises the steps of:
- a) Depositing a conducting metal nitrided diffusion barrier layer on the underlayer, whereby this diffusion barrier layer serves as a barrier between the underlayer and the subsequently deposited layer;
- b) Forming a poorly electrical conducting adhesion-promoter layer on top of the conducting diffusion barrier layer, whereby this adhesion-promoter layer serves to improve the adhesion of the multilayered diffusion barrier structure to the subsequently deposited layer;
- c) Removing the adhesion-promoter layer at selected predetermined locations to increase the electrical conduction to the subsequently deposited layer.
A method to form a multilayered diffusion barrier structure on an underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the method comprises the steps of:
- a) Depositing a conducting diffusion barrier layer on the underlayer, whereby this diffusion barrier layer serves as a barrier between the underlayer and the subsequently deposited layer;
- b) Forming a poorly electrical conducting adhesion-promoter layer on top of the conducting diffusion barrier layer, whereby this adhesion-promoter layer serves to improve the adhesion of the multilayered diffusion barrier structure to the subsequently deposited layer;
- c) Removing the adhesion-promoter layer at selected predetermined locations to increase the electrical conduction to the subsequently deposited layer.
A multilayered diffusion barrier structure on a step underlayer for improving adhesion between the underlayer and a subsequently deposited conducting layer while maintain electrical conduction to the subsequently deposited conducting layer, the multilayered diffusion barrier structure comprises:
- a) A conducting diffusion barrier layer, whereby this diffusion barrier layer serves as a barrier between the underlayer and the subsequently deposited layer;
- b) A poorly electrical conducting adhesion-promoter layer on the conducting diffusion barrier layer on the sidewall of the step of the underlayer, whereby this adhesion-promoter layer serves to improve the adhesion of the multilayered diffusion barrier structure to the subsequently deposited layer and not to reduce the electrical conduction to the subsequently deposited layer.
Dependencies are inferred from the claim text.