Polymer, resist composition and patterning process
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsTsunehiro Nishi, Mutsuo Nakashima, Tomohiro Kobayashi
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Abstract
A polymer comprising recurring units of formula (1-1) or (1-2) wherein R1 and R2 are H or C1-15 alkyl, R1 and R2, taken together, may form a ring; R3 is H, C1-15 alkyl, acyl or alkylsulfonyl or C2-15 alkoxycarbonyl or alkoxyalkyl which may have halogen substituents, not all R1, R2 and R3 are hydrogen; and k=0 or 1, and having a Mw of 1,000-500,000 is novel. A resist composition comprising the polymer as a base resin is sensitive to high-energy radiation, has excellent sensitivity, resolution, etching resistance, and minimized swell and lends itself to micropatterning with electron beams or deep-UV.
Claims7
A polymer comprising recurring units of the following general formula (1-1) or (1-2) and having a weight average molecular weight of 1,000 to 500,000,
- wherein R1 and R2 each are hydrogen or a straight, branched or cyclic alkyl group of 1 to 15 carbon atoms, R1 and R21, taken together, may form a ring, wherein the combination of R1 with R2 is a straight, branched or cyclic alkylene group of 2 to 15 carbon atoms,
- R3 is hydrogen, a straight, branched or cyclic alkyl, acyl or alkylsulfonyl group of 1 to 15 carbon atoms or a straight, branched or cyclic alkoxycarbonyl or alkoxyalkyl group of 2 to 15 carbon atoms, in which some or all of the hydrogen atoms on constituent carbon atoms may be substituted with halogen atoms, with the case that all R1, R2 and R3 are hydrogen being excluded, and
- k is 0 or 1.
Dependencies are inferred from the claim text.