Nanoporous dielectric films with graded density and process for making such films
AssigneeHoneywell International Inc.
InventorsStephen Wallace, Douglas M. Smith, Teresa Ramos, Kevin H. Rodrick, James S. Drage
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Abstract
The present invention relates to nanoporous dielectric films and to a process for their manufacture. A substrate having a plurality of raised lines on its surface is provided with a relatively high porosity, low dielectric constant, silicon containing polymer composition positioned between the raised lines and a relatively low porosity, high dielectric constant, silicon containing composition positioned on the lines.
Claims21
A multidensity nanoporous dielectric coated substrate which comprises a substrate, a plurality of raised lines on the substrate, a single, monolithic nanoporous silicon containing polymer composition layer on tie substrate, which monolithic nanoporous silicon containing polymer composition layer has a first region of a graded density, high porosity, low dielectric constant, nanoporous silicon containing polymer composition positioned between the raised lines and second region of a graded density, low porosity, high dielectric constant, nanoporous silicon containing polymer composition positioned on top of the lines, wherein die difference between the average refractive index of the second region and the average refractive index of the first region ranges from about 0.03 to about 0.06.
A semiconductor device which comprises a substrate, a plurality of raised lines on the substrate, a single, monolithic nanoporous silicon containing polymer composition layer on the substrate, which monolithic nanoporous silicon containing polymer composition layer has a first region of a graded density, high porosity, low dielectric constant, nanoporous silicon containing polymer composition positioned between the raised lines and second region of a graded density, low porosity, high dielectric constant, nanoporous silicon containing polymer composition positioned on top of the lines, wherein the difference between the average refractive index of the second region and the average refractive index of the first region ranges from about 0.03 to about 0.06.
A process for forming a multidensity nanoporous dielectric coating on a substrate having raised pattern lines which comprises
- a) blending at least one alkoxysilane with a relatively high volatility solvent composition, a relatively low volatility solvent composition and optional water thus forming a mixture and causing a partial hydrolysis and partial condensation of the alkoxysilane;
- b) depositing the mixture onto a substrate having a raised pattern of lines such that the mixture is positioned both between the lines and on the lines, while evaporating at least a portion of the relatively high volatility solvent composition;
- c) exposing the mixture to a water vapor and a base vapor;
- and
- d) evaporating the relatively low volatility solvent composition, thereby forming a single, monolithic nanoporous silicon containing polymer composition layer on the substrate, which monolithic nanoporous silicon containing polymer composition layer has a first region of a graded density, high porosity, low dielectric constant, nanoporous silicon containing polymer composition positioned between the raised lines and second region of a graded density, low porosity, high dielectric constant, nanoporous silicon containing polymer composition positioned on top of the lines, wherein the difference between the average refractive index of the second region and the average refractive index of the first region ranges from about 0.03 to about 0.06.
Dependencies are inferred from the claim text.