Optical recording medium and use of such optical recording medium

An optical recording medium comprising a substrate and a stack of layers provided thereon, the substrate being optically transparent to a laser-light beam, the stack including in sequential order:

• a first dielectric layer, a first crystallization accelerating layer, a recording layer, a second crystallization accelerating layer, a second dielectric layer, and a reflecting layer, wherein a first surface of the first dielectric layer is in direct mechanical contact with the substrate, wherein the first crystallization accelerating layer is in direct mechanical contact with a second surface of the first dielectric layer, wherein the recording layer is in direct mechanical contact with the first crystallization accelerating layer, wherein the second crystallization accelerating layer is in direct mechanical contact with the recording layer, wherein the second dielectric layer is in direct mechanical contact with the second crystallization accelerating layer, wherein the second dielectric layer is disposed between the second dielectric layer and the reflecting layer, wherein the first dielectric layer includes a first dielectric material whose molecular composition is continuously distributed from the first surface of the first dielectric layer to the second surface of the first dielectric layer, wherein the recording layer has a melting point Tmp and is able to change between an amorphous and a crystalline state, wherein the second crystallization accelerating layer is similar to the first crystallization accelerating layer, and wherein the first and second crystallization accelerating layers each:
• comprise a material selected from the group consisting of a binary metal alloy, a semiconductor element, and a semiconductor alloy;
• have a melting point Tmg at least 250° C. higher than the melting point Tmp of the recording layer;
• and
• have a crystal structure similar to the crystalline state of the recording layer.

An optical recording medium having a substrate and a stack of layers provided thereon, the stack comprising a recording layer, a reflecting layer, a crystallization accelerating layer, a first dielectric layer, and a second dielectric layer, the recording layer having a melting point Tmp and being able to change between an amorphous and a crystalline state, the recording layer being disposed between the first and second dielectric layers, the first dielectric layer being adjacent to the substrate, the crystallization accelerating layer being in contact with the recording layer, the reflective layer being disposed between the substrate and the first dielectric layer, wherein the crystallization accelerating layer;

• comprises a material selected from the group consisting of PbTe, Ag2Te, and CrTe;
• has a melting point Tmg at least 250° C. higher than the melting point Tmp of the recording layer;
• and
• has a crystal structure similar to the crystalline state of the recording layer.