Sputtering target, transparent conductive oxide, and process for producing the sputtering target
AssigneeIdemitsu Kosan Co., Ltd.
InventorsKazuyoshi Inoue, Tadao Shibuya, Akira Kaijo
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Abstract
In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 μm or less.
Claims23
A sputtering target comprising at least indium oxide and zinc oxide,
- wherein the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, and further,
- a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 μm or less.
A transparent conductive oxide comprising a sputtering target wherein the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 μm or less.
A sputtering target comprising at least indium oxide and zinc oxide,
- wherein the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, and further,
- a spinel structural compound represented by Zn2SnO4 is contained, and the crystal grain size of the spinel structural compound is set to a value of 5 μm or less.
A process for producing a sputtering target containing a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20, the crystal grain size of the hexagonal layered compound being a value of 5 μm or less, comprising the steps (1) to (5):
- (1) producing a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20,
- (2) adjusting the produced hexagonal layered compound to have a grain size of 5 μm or less,
- (3) blending the hexagonal layered compound having the adjusted grain size with indium oxide powder,
- (4) making a formed body wherein the atomic ratio of In/(In+Zn) is within the range of 0.75 to 0.97, and
- (5) sintering the formed body at a temperature of 1,400° C. or higher in an oxygen gas or pressured oxygen gas atmosphere.
A process for producing a sputtering target containing a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20, the crystal grain size of the hexagonal layered compound being a value of 5 μm or less, comprising the steps (1) to (3):
- (1) blending indium oxide powder with zinc oxide powder having an average grain size of 2 μm or less,
- (2) making a formed body wherein the atomic ratio of In/(In+Zn) is within the range of 0.75 to 0.97, and
- (3) sintering the formed body at a temperature of 1,400° C. or higher in an oxygen gas or pressured oxygen gas atmosphere.
Dependencies are inferred from the claim text.