Method for detecting etching endpoint, and etching apparatus and etching system using the method thereof
AssigneeSumitomo Metal Industries, Ltd.
InventorsToshiya Miyazaki, Toshihiro Hayami, Tadao Nakatsuka, Hiroyuki Tanaka, Toshiyuki Nakamura
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Abstract
A method for detecting an etching endpoint and a plasma etching apparatus and a plasma etching system using such a device are disclosed, in which time series data of a signal corresponding to the amount of light of the plasma light generated during the plasma etching process are arithmetically processed, so that the change of light amount is corrected and an etching endpoint is detected from the time series data after the correction.
Claims5
A system for detecting an etching endpoint on the basis of plasma light generated during the plasma etching process, comprising:
- means for receiving the plasma light into a photoelectrically transduced signal and photoelectrically transducing said plasma light;
- means for producing a time series data including a plurality of data values of the photoelectrically transduced signal;
- correcting means for digitally correcting the change of light amount due to change in the quality of the received plasma light of an arithmetic operation performed on said time series data;
- and
- means for detecting an etching endpoint from the corrected time series data.
Dependencies are inferred from the claim text.