Mixed frequency RF generator coupled to the gas distribution system
AssigneeApplied Materials, Inc.
InventorXiang Yu Yao
Life of this patent
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Abstract
The present invention provides a plasma enhanced chemical vapor deposition method and apparatus for reducing the hydrogen concentration in amorphous silicon carbide films deposited on a substrate. The process combines a noble gas such as helium with a silicon source such as silane and a carbon source such as methane in the reaction zone of a CVD chamber. The resulting silicon carbide films have a low concentration of hydrogen and high compressive stress. The films are preferably produced with a plasma generated by a mixture of high and low radio frequency.
Claims18
A substrate processing system, comprising:
- a vacuum chamber comprising a reaction zone, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system;
- a gas distribution system connecting the reaction zone of the vacuum chamber to supplies of a silicon source, a carbon source, and a noble gas;
- a mixed frequency RF generator coupled to the gas distribution system for generating a plasma in the reaction zone;
- a controller comprising a computer coupled to the vacuum chamber, the gas distribution system, and the RF generator;
- and
- a memory coupled to the controller, the memory comprising a computer usable medium comprising a computer readable program code for conducting a process comprising generating and maintaining a plasma from a mixture of the silicon source, the carbon source, and the noble gas using mixed frequency RF power.
A substrate processing system, comprising:
- a vacuum chamber comprising a reaction zone, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system;
- a gas distribution system connecting the reaction zone of the vacuum chamber to supplies of a silicon source, a carbon source, and a noble gas;
- an RF generator coupled to the gas distribution system for generating a plasma in the reaction zone;
- a controller comprising a computer for controlling the vacuum chamber, the gas distribution system, and the RF generator;
- and
- a memory coupled to the controller, the memory comprising a computer usable medium comprising a computer readable program code for conducting a process comprising generating and maintaining a plasma from a mixture of the silicon source, the carbon source, and the noble gas using mixed frequency RF power, the mixed frequency RF power having a ratio of low frequency RF power to total RF power less than about 0.6.
A substrate processing system, comprising:
- a vacuum chamber comprising a reaction zone, a substrate holder for positioning a substrate in the reaction zone, and a vacuum system;
- a gas distribution system connecting the reaction zone of the vacuum chamber to supplies of a silane source, a methane source, and a helium gas;
- an RF generator coupled to the gas distribution system for generating a plasma in the reaction zone;
- a controller comprising a computer for controlling the vacuum chamber, the gas distribution system, and the RF generator;
- and
- a memory coupled to the controller, the memory comprising a computer usable medium comprising:
- first computer readable program code for selecting a process comprising generating and maintaining a plasma from a mixture of the silane source, the methane source, and the helium gas using mixed frequency RF power, the mixed frequency RF power comprising a ratio of low frequency RF power to total RF power less than about 0.6;
- and
- second computer readable program code for selecting a reaction zone pressure between about 1.5 torr to about 6.0 torr and a substrate temperature between about 150° C. to about 600° C. for reaction of the silane source and the carbon source.
Dependencies are inferred from the claim text.