Semiconductor device and manufacturing thereof, including a through-hole with a wider intermediate cavity
AssigneeSeiko Epson Corporation
InventorsTerunao Hanaoka, Kenji Wada, Nobuaki Hashimoto, Haruki Ito, Kazushige Umetsu, Fumiaki Matsushima
Life of this patent
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Abstract
A method of manufacturing a semiconductor device comprises a step of forming a through-hole in a semiconductor chip having an electrode and forming a conductive layer on a region comprising an inner side of the through-hole. An intermediate portion of the through-hole is formed to be larger than an edge portion thereof, and the conductive layer is formed by electroless plating.
Claims29
A method of manufacturing a semiconductor device, the method comprising:
- (a) forming a through-hole within an interior of a semiconductor element to have an entry, an egress, an intermediate cavity and a tapered cavity connecting each of the entry and the egress with the intermediate cavity, the intermediate cavity wider than any of the entry and the egress, the intermediate cavity in whole formed at substantially the same width, the semiconductor element having an integrated circuit formed therein and an electrode, the electrode electrically connected to at least the integrated circuit;
- and
- (b) forming a conductive layer at least in an inner side of the through-hole.
A semiconductor device comprising:
- a semiconductor element having an integrated circuit formed therein and an electrode formed thereon, the electrode electrically connected to at least the integrated circuit, the semiconductor element having a through-hole formed within its interior, the through-hole having an entry, an egress, an intermediate cavity and a tapered cavity connecting each of the entry and the egress with the intermediate cavity, the intermediate cavity wider than any of the entry and the egress, the intermediate cavity in whole formed at substantially the same width;
- and
- a conductive layer formed at least in an inner side of the through hole.
A method of manufacturing a semiconductor device, comprising:
- (a) forming a through-hole within an interior of a semiconductor element to have an entry, an egress, an intermediate cavity and a tapered cavity connecting each of the entry and the egress with the intermediate cavity, the intermediate cavity wider than any of the entry and the egress, the intermediate cavity in whole formed at substantially the same width, the semiconductor element having an integrated circuit formed therein and an electrode, the electrode electrically connected to at least the integrated circuit;
- and
- (b) forming a conductive layer at least in an inner side of the through-hole so as to be electrically connected to the electrode.
A semiconductor device comprising:
- a semiconductor element having an integrated circuit formed therein and an electrode formed thereon, the electrode electrically connected to at least the integrated circuit, the semiconductor element having a through-hole formed within its interior, the through-hole having an entry, an egress, an intermediate cavity and a tapered cavity connecting each of the entry and the egress with the intermediate cavity, the intermediate cavity wider than any of the entry and the egress, the intermediate cavity in whole formed at substantially the same width;
- and
- a conductive layer formed at least in an inner side of the through-hole and electrically connected to the electrode.
Dependencies are inferred from the claim text.