Method and apparatus for patterning fine dimensions

A method of forming a repetitive pattern comprising:

• using a mask having a repetitive pattern with an initial pitch to form pedestals on a substrate having the initial pitch;
• forming first sidewalls having a first cross-sectional width on the substrate around the pedestals;
• removing the pedestals leaving the first sidewalls on the substrate having a first space there-between;
• forming second sidewalls having a second cross-sectional width and third sidewalls having a third cross-sectional width on an inside surface and an outside surface respectively of the first sidewalls on the substrate, the second sidewalls and the third sidewalls being spaced apart by a second space;
• removing the first sidewalls leaving the second sidewalls and the third sidewalls and generating a third space between the second sidewalls and the third sidewalls;
• and,
• wherein the first cross-sectional width and the first space form a first final pitch less than the initial pitch of the mask and the second space and the second cross-sectional width form a second final pitch and the third space and the third cross-sectional width form a third final pitch, the second final pitch and the third final pitch less than the initial pitch of the mask.

A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising:

• providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch;
• depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals;
• vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing;
• etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate;
• and
• wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals.

A method of forming fine geometry patterns using a mask having larger mask pattern dimensions, the method comprising:

• providing a substrate and forming a repetitive pattern of pedestals on the substrate out of a first working material, the repetitive pattern of pedestals having an initial pitch;
• depositing a layer of a second working material on the substrate and the repetitive pattern of pedestals;
• vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding the side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing;
• etching away the repetitive pattern of pedestals leaving the first sidewalls of the second working material extending from the substrate;
• depositing a layer of the first working material on the substrate and the first sidewalls;
• vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing;
• etching away the first sidewalls leaving the second and third sidewalls of the first working material extending from the substrate, the etched away first sidewalls forming a third spacing between the second and third sidewalls;
• wherein the first sidewalls have a first pitch of the first spacing and the first width less than the initial pitch of the repetitive pattern of pedestals;
• and
• wherein the second sidewalls have a second pitch of the second spacing and the second width less than the initial pitch of the repetitive pattern of pedestals.

A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising:

• forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch;
• depositing a layer of a second working material over the semiconductor wafer;
• vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing;
• etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer;
• and
• wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals.

A method of forming a repetitive pattern of at least one semiconductive layer over a semiconductor wafer, the method comprising:

• forming a repetitive pattern of pedestals of a first working material over the semiconductor wafer, the repetitive pattern of pedestals having an initial pitch;
• depositing a layer of a second working material over the semiconductor wafer;
• vertically etching horizontal portions of the layer of the second working material to form first sidewalls of the second working material surrounding side surfaces of the repetitive pattern of pedestals, the first sidewalls of the second working material having a first width dimension and being spaced apart by a first spacing;
• etching away the repetitive pattern of pedestals of the first working material leaving the first sidewalls of the second working material formed on the semiconductor wafer;
• depositing a layer of the first working material over the wafer;
• vertically etching horizontal portions of the layer of the first working material to form second sidewalls of the first working material on inside surfaces of the first sidewalls and to form third sidewalls of the first working material on outside surfaces of the first sidewalls, the second sidewalls having a second width, the third sidewalls having a third width, the second sidewalls and the third sidewalls being spaced apart by a second spacing;
• etching away the first sidewalls leaving the second and third sidewalls of the first working material formed on the semiconductor wafer, the etched away first sidewalls forming a third spacing between the second and third sidewalls;
• wherein the first sidewalls have a first pitch of the first spacing and the first width, the first pitch of the first sidewalls less than the initial pitch of the repetitive pattern of pedestals;
• and
• wherein the second sidewalls have a second pitch of the second spacing and the second width, the second pitch of the second sidewalls less than the initial pitch of the repetitive pattern of pedestals.