Synchrotron radiation measurement apparatus, X-ray exposure apparatus, and device manufacturing method
AssigneeCanon Kabushiki Kaisha
InventorsHideyuki Chinju, Yutaka Watanabe, Akira Miyake, Nobuaki Ogushi
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Abstract
A measurement apparatus has a first detector for measuring an intensity such that a sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction thereof; a second detector for measuring the intensity of the beam at two points where positions along the direction are different; and a calculating device for calculating the magnitude of the beam in the direction on the basis of the detections by the first and second detectors.
Claims27
A measurement apparatus comprising:
- a first detector that measures an intensity of a sheet-shaped beam of synchrotron radiation, said first detector configured such that the intensity of the sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction of the beam;
- a second detector for measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different;
- and
- a calculator for calculating a beam profile in the thickness direction of the beam on the basis of the detections by said first and second detectors.
A measurement method comprising the steps of:
- measuring an intensity of a sheet-shaped beam of synchrotron radiation, the intensity being integrated over the entire range of the beam in the thickness direction of the beam;
- measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different;
- and
- calculating a beam profile in the thickness direction of the beam on the basis of the respective measurements.
An X-ray exposure apparatus comprising:
- a mirror for reflecting an X-ray beam from a synchrotron radiation source;
- a stage which holds a substrate to be exposed to the X-ray beam;
- and
- a measuring device disposed in proximity to said mirror, for measuring intensity distribution of the X-ray beam irradiating the substrate, the measuring device comprising:
- a first detector that measures an intensity of a sheet-shaped beam of synchrotron radiation, said first detector configured such that the intensity of the sheet-shaped beam of synchrotron radiation is integrated over the entire range of the beam in the thickness direction of the beam;
- a second detector for measuring the intensity of the beam at two points where positions along the thickness direction of the beam are different;
- and
- calculating means for calculating a beam profile in the thickness direction of the beam on the basis of the detections by said first and second detectors.
A semiconductor device manufacturing method comprising:
- generating an X-ray beam from a synchrotron radiation source;
- reflecting the X-ray beam by a mirror to irradiate a substrate with the X-ray beam;
- measuring in proximity to said mirror, intensity distribution of the X-ray beam irradiating the substrate, said measuring step comprising:
- measuring an intensity of a sheet-shaped beam of synchrotron radiation, the intensity being integrated over the entire range of the beam in the thickness direction of the beam;
- measuring the intensity of said beam at two points where positions along the thickness direction of the beam are different;
- and
- calculating a beam profile in the thickness direction of the beam on the basis of the respective measurements;
- and
- exposing the substrate to the X-ray beam so as to transfer patterns of a semiconductor device.
Dependencies are inferred from the claim text.