Broadband visible light source based on AllnGaN light emitting diodes
AssigneeSandia Corporation
InventorsMary H. Crawford, Jeffrey S. Nelson
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Abstract
A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS2, MoSe2, WS2, and WSe2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.
Claims19
A visible light source device, comprising:
- a substrate layer comprising a top and bottom,
- a GaN buffer layer grown on the top of said substrate layer,
- a GaN layer grown on said GaN buffer layer,
- a n-Al0.2Ga0.8N layer grown on said GaN layer,
- a semiconductor quantum well structure grown on said n-Al0.2Ga0.8N layer,
- a p-Al0.2Ga0.8N layer grown on said semiconductor quantum well structure,
- a p-Al0.1Ga0.9N layer grown on said p-Al0.2Ga0.8N layer,
- a p-GaN contact layer;
- and
- a nanocluster film having strong absorption in the ultraviolet wavelength range and strong emission in the visible wavelength range deposited on the bottom of said substrate layer.
Dependencies are inferred from the claim text.