Semiconductor laser unit having optical guide layers with increased total thickness and employing junction-up configuration
AssigneeFuji Photo Film Co., Ltd.
InventorHideki Asano
Life of this patent
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Abstract
A semiconductor laser device is bonded to a heat sink. The semiconductor laser device contains a stripe structure having a width equal to or greater than 10 micrometers, and including a first optical guide layer of a first conductivity type, an active layer, and a second optical guide layer of a second conductivity type. A total thickness of the first and second optical guide layers is equal to or more than 0.5 micrometers. The semiconductor laser device is soldered onto the heat sink at a surface of the semiconductor laser device where the surface located is farther from the active layer than other surfaces of the semiconductor laser device.
Claims7
A semiconductor laser unit comprising:
- a semiconductor laser device including a stripe structure, a first optical guide layer of a first conductivity type, an active layer, a second optical guide layer of a second conductivity type, wherein each layer of the semiconductor laser device has a surface;
- and
- a heat sink;
- wherein a total thickness of said first and second optical guide layers is equal to or more than 0.5 micrometers, and
- said semiconductor laser device is soldered onto said heat sink at a surface of the semiconductor laser device, where said surface to be soldered is the surface farthest away from said active layer of all of said surfaces of the semiconductor laser device,
- wherein the total thickness of said first and second optical guide layers is greater than or equal to 0.5 micrometers and less than or equal to 1.2 micrometers.
A semiconductor laser unit comprising:
- a semiconductor laser device including a stripe structure having a width equal to or greater than 10 micrometers, and including a first optical guide layer of a first conductivity type, an active layer, a second optical guide layer of a second conductivity type, wherein each layer of the semiconductor laser device has a surface;
- and
- a heat sink;
- wherein a total thickness of said first and second optical guide layers is equal to or more than 0.5 micrometers, and
- said semiconductor laser device is soldered onto said heat sink at a surface of the semiconductor laser device, where said surface to be soldered is the surface farthest away from said active layer of all of said surfaces of the semiconductor laser device,
- wherein the total thickness of said first and second optical guide layers is greater than or equal to 0.5 micrometers and less than or equal to 1.2 micrometers.
Dependencies are inferred from the claim text.