Semiconductor integrated circuit with reduction of self refresh current
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorMitsunori Tsujino
Life of this patent
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Abstract
In a semiconductor integrated circuit having a DRAM, a DWL driver circuit has a bias function unit (42, 43) for supplying, as a potential of a word line, a sub decode signal of an H level in an active state and an L level signal of a ground potential in a standby state, and switching the potential of the word line to a low potential for self refresh which is higher than the ground potential only by a very small value (+αvolts) in a self refresh mode. Thus, a refresh cycle is extended to thereby reduce a self refresh current.
Claims12
A semiconductor integrated circuit having a DRAM mounted thereon, comprising:
- a DWL driver circuit for selectively driving a word line, supplying a sub decode signal of an H level as a potential of the word line in an active state, and supplying an L-level signal of a ground potential in a standby state for a normal operation;
- and
- bias means for switching and connecting in a self refresh mode the potential of the word line to a potential of a low voltage for self refresh which is slightly higher than said ground potential.
A semiconductor integrated circuit having a DRAM mounted thereon, comprising:
- a DWL driver circuit for selectively driving a word line, supplying a sub decode signal of an H level as a potential of the word line in an active state, and supplying an L-level signal of a ground potential in a standby state for a normal operation;
- a self refresh GND switching circuit interposed between said DWL driver circuit and said ground potential, for switching said ground potential level in a self refresh mode;
- and
- a low voltage generating circuit connected to said self refresh GND switching circuit, for generating a low voltage for self refresh which is slightly higher than said ground potential,
- wherein in the self refresh mode, said self refresh GND switching circuit disconnects said word line from said ground potential and biases the potential of said word line to said low voltage for self refresh generated by said low voltage generating circuit in a standby state.
Dependencies are inferred from the claim text.