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US 6,665,207 B2Granted
ROM embedded DRAM with dielectric removal/short
AssigneeMicron Technology, Inc.
InventorsPhillip G. Wald, Casey Kurth, Scott Derner
Life of this patent
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Abstract
A ROM embedded DRAM allows hard programming of ROM cells by shorting DRAM capacitor plates during fabrication. In one embodiment, the intermediate dielectric layer is removed and the plates are shorted with a conductor. In another embodiment, an upper conductor and dielectric are removed and a conductor is fabricated in contact with the DRAM storage plate. The memory allows ROM cells to be hard programmed to different data states, such as Vcc and Vss.
Claims10
A read only memory (ROM) cell comprising:
- a first capacitor plate;
- a second capacitor plate separated from the first capacitor plate by a layer of dielectric;
- a conductive short between the first and second capacitor plates;
- and
- an access device to electrically couple the second capacitor plate to a digit line.
2 more elements
A memory device comprising:
- a first capacitor plate;
- a second capacitor plate separated from the first capacitor plate by a layer of dielectric;
- a conductive short between the first and second capacitor plates;
- and
- an access device to electrically couple the second capacitor plate to a digit line.
2 more elements
A memory device comprising:
- a dynamic memory cell comprising,
- a capacitor having first and second plates electrically isolated by an intermediate dielectric layer, and
- a first access transistor coupled between the capacitor and a digit line;
- and a read only memory (ROM) cell comprising,
- a first conductive plate electrically coupled to receive a program voltage, and
- a second access transistor coupled between the first conductive plate and the digit line.
3 more elements
Dependencies are inferred from the claim text.