Semiconductor circuit having increased susceptibility to ionizing radiation

A method comprising:

• comparing a first signal indicative of a first current leakage with a second signal indicative of a second current leakage, wherein said first current leakage and said second current leakage are indicative of an amount of exposure to ionizing radiation;
• generating a third signal that:
• has a first value when a difference between said first signal and said second signal meets or exceeds a threshold difference, and
• has a second value when a difference between said first signal and said second signal is less than said threshold difference permanently disables an integrated circuit when said third signal has said first value and not disabling said integrated circuit when said third signal has said second value.

A method comprising:

• fabricating an integrated circuit comprising a first device having a first tolerance to ionizing radiation and a second device having a second tolerance to ionizing radiation, wherein said second tolerance is greater than said first tolerance;
• electrically connecting an output of said first device to a first input of a differential amplifier and electrically connecting an output of said second device to a second input of said differential amplifier;
• and
• electrically connecting an output of said differential amplifier to a circuit disabling means which permanently disables said integrated circuit.